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| PD -20353D SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 22GQ100 30A, 100V Major Ratings and Characteristics Characteristics IIF(AV) Rectangular waveform VRRM IFSM @ tp = 8.3ms half-sine VF @ 30Apk, TJ =125C 22GQ100 30 100 400 0.90 Units A V A V C Description/Features The 22GQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. * Hermetically Sealed * High Frequency Operation * Guard Ring for Enhanced Ruggedness and Long Term Reliability * Schottky Diodes Connected in Series * Electrically Isolated TJ, Tstg Operating and storage -55 to 150 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] CASE STYLE 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] (ISOLATED BASE) NOTES : 1. 2. 3. 4. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994. AL L DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONT ROL LING DIMENS ION: INCH. CONF ORMS TO JEDE C OUTLINE T O-254AA. 1 CATHODE 2 3 ANODE IR Case Style TO-254AA www.irf.com 1 02/22/02 22GQ100 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 22GQ100 100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 400 A @ tp = 8.3 ms half-sine Limits 30 Units A Conditions 50% duty cycle @ TC = 100C, rectangular waveform Electrical Specifications Parameters V FM Max. Forward Voltage Drop See Fig. 1Q Limits 1.1 1.6 0.9 1.3 Units V V V V mA mA pF nH @ 20A @ 35A @ 20A @ 35A TJ = 25C TJ = 125C Conditions TJ = 25C TJ =1 25C VR = rated VR I RM CT LS Max. Reverse Leakage Current See Fig. 2 Q Max. Junction Capacitance Typical Series Inductance 0.8 45 1400 7.8 VR = 5VDC ( 1MHz, 25C ) Measured from anode lead to cathode lead 6mm ( 0.025 in.) from package Thermal-Mechanical Specifications Parameters TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size Case Style 9.3 200X200 TO-254AA g mils Limits Units -55 to 150 -55 to 150 1.0 C C C/W DC operation Conditions RthJC Max. Thermal Resistance, Junction See Fig. 4 Q Pulse Width < 300s, Duty Cycle < 2% 2 www.irf.com 22GQ100 100 T = 1 50C J 125C 100C 10 1 0.1 0.01 25C 0.001 A 0 20 40 60 R 0.0001 80 100 R ev e rse V o lta g e - V (V ) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage Fig. 1 - Max. Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 22GQ100 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 22GQ100 RthJC (DC) = 1.0C/W Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 4 www.irf.com |
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